Date of Award
1-1-2013
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (xv, 103 pages) : color illustrations.
Dissertation/Thesis Chair
Mengbing Huang
Committee Members
Kathleen A Dunn, Hassaram Bakhru, Gregory Denbeaux, John C Kimball
Keywords
Erbium doped Silicon laser, Gettering, Ion Implantation, Nanocavities, Silver, Silicon compounds, Erbium, Photoluminescence, Ion implantation
Subject Categories
Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
Erbium doped silicon is of great interest as a potential light source in Silicon Photonics research due to its light emission at 1.54 μm, which corresponds to the minimal loss of optical transmission in silica fibers for telecommunications. In this thesis a basic mechanism for excitation and de-excitation of Er in Si is reviewed. Based on such fundamental understanding, an innovative approach is proposed and implemented to improve Er luminescence properties through the formation of metal nanoparticles via impurity gettering in Si nanocavities.
Recommended Citation
Naczas, Sebastian, "Ion beam nano-engineering of erbium doped silicon for enhanced light emission at 1.54 microns" (2013). Legacy Theses & Dissertations (2009 - 2024). 961.
https://scholarsarchive.library.albany.edu/legacy-etd/961