Date of Award

1-1-2013

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (xviii, 161 pages) : illustrations (some color)

Dissertation/Thesis Chair

Alain C Diebold

Keywords

Light, Semiconductors, Microelectronics, Nanostructures

Subject Categories

Engineering | Nanoscience and Nanotechnology | Optics

Abstract

Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light.

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