Date of Award
1-1-2012
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (xviii, 174 pages) : illustrations (some color)
Dissertation/Thesis Chair
Robert E Geer
Committee Members
Ji Ung Lee, Vincent LaBella, Carl Ventrice Jr., Spyros Gallis
Keywords
doping profile, electrostatic doping, Fermi level shift, graphene p-n junction, Kelvin probe force microscopy, surface potential, Semiconductors, Graphene, Surface discharges (Electricity)
Subject Categories
Materials Science and Engineering
Abstract
Manipulation and control of electron current in a graphene p-n junction (e.g. electron waveguiding, reflection, focusing) is directly determined by the spatial gradient of the Fermi level across the junction. Sharp Fermi level gradients are associated with negative index `lensing' of electrons in graphene while broader gradients are predicted to form reflective boundaries. Quantitative metrology of the Fermi level gradient at p-n junctions is thus essential to determine device performance, validate models for device design and switch architectures, and quantitatively determine the impact of defects on device function and leakage.
Recommended Citation
Wang, Yunfei, "Surface potential measurements of reconfigurable p-n junctions in graphene" (2012). Legacy Theses & Dissertations (2009 - 2024). 800.
https://scholarsarchive.library.albany.edu/legacy-etd/800