Date of Award

1-1-2019

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (xi, 96 pages) : color illustrations.

Dissertation/Thesis Chair

Bin Yu

Committee Members

Ernie Levine, Vadim Tokranov, Carl Ventrice, Tong Zhang

Keywords

2D Materials, Chemical vapor deposition, Molybdenum Disulfide, Nanofabrication, Nanoscience, Phototransistor, Molybdenum disulfide, Raman spectroscopy, Photolithography

Subject Categories

Electrical and Electronics | Materials Science and Engineering | Nanoscience and Nanotechnology

Abstract

Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials commercially viable both in performance and production. This thesis explores these aspects through synthesis, fabrication, and device performance. First, a new chemical vapor deposition process for MoS2 is introduced using a defect-rich MoS2 bulk source through an oxidation and re-sulfurization process. Second, we investigate the effects of the photolithography process on the material properties on MoS2 through Raman and photoluminescence spectroscopy. Lastly, we investigate carrier transport mechanisms of CVD MoS2 and its device behavior as a phototransistor.

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