Date of Award

1-1-2016

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xii, 146 pages) : color illustrations

Dissertation/Thesis Chair

James R Lloyd

Committee Members

Kathleen Dunn, Vincent LaBella, Robert Rosenberg, Christian Witt

Keywords

Low-k Dielectrics, Magnetoresistance, Reliability, Time Dependent Dielectric Breakdown, Computer systems, Dielectrics, Integrated circuits

Subject Categories

Materials Science and Engineering | Nanoscience and Nanotechnology | Physics

Abstract

Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a topic of debate.

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