Date of Award

1-1-2016

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xii, 113 pages) : color maps, color illustrations

Dissertation/Thesis Chair

Vincent P LaBella

Committee Members

Carl Ventrice, Alain Diebold, Greg Denbeaux, Steven Consiglio

Keywords

Electron transport, Electrons, Diodes, Schottky-barrier, Transmission electron microscopy, Tungsten, Silicon

Subject Categories

Nanoscience and Nanotechnology

Abstract

Understanding the transport of electrons through materials and across interfaces is fundamental to modern day electronics. As electrons travel, interactions with defects within the crystal lattice induce scattering which gives rise to resistivity. At the interface between two materials, electrostatic barriers exist which can impede the flow of electrons. The work of this thesis is to further the understanding of electron transport by measuring the transport across metal-semiconductor interfaces at the nanoscale and measure scattering phenomena in metals. The measurement technique ballistic electron emission microscopy (BEEM) was used due to its ability to probe the scattering processes within a metal film and across metal semiconductor interfaces with nanoscale resolution.

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