Date of Award
1-1-2014
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xviii, 183 pages) : color illustrations
Dissertation/Thesis Chair
Kathleen Dunn
Committee Members
Steven Novak, James Lloyd, James J Kelly, I. Cevdet Noyan
Keywords
Copper Interconnects, Grain growth, Microstructure Development, Recrystallization, Semiconductor processing, Interconnects (Integrated circuit technology), Copper, Integrated circuits
Subject Categories
Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed.
Recommended Citation
Rizzolo, Michael, "The influence of impurities and metallic capping layers on the microstructure of copper interconnects" (2014). Legacy Theses & Dissertations (2009 - 2024). 1255.
https://scholarsarchive.library.albany.edu/legacy-etd/1255