Date of Award

1-1-2014

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (vi, 112 pages) : color illustrations.

Dissertation/Thesis Chair

Ji Ung Lee

Committee Members

Robert Geer, Hassaram Bakhru, Vincent Labella, Qiuyi Ye

Keywords

Carbon Nanotubes, Gate-all-around MOSFETs, Radiation Effects, Metal oxide semiconductor field-effect transistors, Nanowires, Nanostructured materials

Subject Categories

Nanoscience and Nanotechnology

Abstract

The scaling of MOSFETs has resulted in short channel effects that increase their power consumption above acceptable levels. In order to lower the power dissipation, new device designs and materials are being considered. For example, multiple-gate MOSFETs, including the gate-all-around silicon nanowire (GAA SiNW) MOSFET, are known to reduce short channel effects. Furthermore, new high-mobility channel materials such as single-walled carbon nanotubes (SWNTs) can be integrated to allow for further scaling of the supply voltage, again aiding in lowering power dissipation.

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