Date of Award
1-1-2014
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (vi, 112 pages) : color illustrations.
Dissertation/Thesis Chair
Ji Ung Lee
Committee Members
Robert Geer, Hassaram Bakhru, Vincent Labella, Qiuyi Ye
Keywords
Carbon Nanotubes, Gate-all-around MOSFETs, Radiation Effects, Metal oxide semiconductor field-effect transistors, Nanowires, Nanostructured materials
Subject Categories
Nanoscience and Nanotechnology
Abstract
The scaling of MOSFETs has resulted in short channel effects that increase their power consumption above acceptable levels. In order to lower the power dissipation, new device designs and materials are being considered. For example, multiple-gate MOSFETs, including the gate-all-around silicon nanowire (GAA SiNW) MOSFET, are known to reduce short channel effects. Furthermore, new high-mobility channel materials such as single-walled carbon nanotubes (SWNTs) can be integrated to allow for further scaling of the supply voltage, again aiding in lowering power dissipation.
Recommended Citation
Comfort, Everett Steven, "Radiation effects in gate-all-around silicon nanowire MOSFETs and carbon nanotube p-n diodes" (2014). Legacy Theses & Dissertations (2009 - 2024). 1104.
https://scholarsarchive.library.albany.edu/legacy-etd/1104