Date of Award

1-1-2013

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 electronic text (vi, 138 pages) : illustrations (some color)

Dissertation/Thesis Chair

Ji U Lee

Committee Members

Ji U Lee, Robert Geer, Vincent LaBella, Yongqiang Xue, Qiuyi Ye

Keywords

Band gap renormalization, Carbon nanotubes, Diode leakage current, Excitonic transitions, Nanoelectronic devices, Semiconductor band gap, Diodes

Subject Categories

Nanoscience and Nanotechnology

Abstract

Carbon nanotubes are good candidates for future applications, including nanoelectronic and nanophotonic devices. Their quasi-one dimensional (1D) character offers appealing device properties. These include reduced carrier scattering, carrier mobility up to two orders of magnitude higher than that of materials used in state-of-the-art computer chips today, current densities rivaling those of the best semiconductors, enhanced optical absorption, and band gaps tunable with tube diameter and doping. Recent breakthroughs in research point to the possibility of placing nanotubes precisely on substrates with densities approaching that of transistors on today's computer chips in a way that's integratable with existing Si-based technology. Such advances may accelerate the day when high-speed and power-efficient applications using carbon nanotubes as the transistor channel can become a reality.

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