Date of Award
1-1-2013
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (x, 285 pages) : illustrations (some color)
Dissertation/Thesis Chair
Robert E Geer
Committee Members
Ji Ung Lee, Nathanial Cady, James Lloyd
Keywords
device physics MIM capacitor, electrical physical characterization, Hafnium Oxide, nonvolatile memory, Resistive RAM, simulations, Nonvolatile random-access memory, Hafnium oxide
Subject Categories
Engineering | Nanoscience and Nanotechnology
Abstract
Resistive random access memory (ReRAM) technology presents an attractive option for embedded non-volatile (NV) memory systems if its variability (cycle-to-cycle and device-to-device) can be controlled. This dissertation has focused on investigations to identify key mechanisms and parameters which dominate ReRAM variability, and the development of subsequent experimental and simulation-based tools to address this variability. The first component of these efforts entailed identification of the modern-day non-volatile memory technological gaps that have driven the operational requirements and challenges for resistive memory as an emerging NV memory.
Recommended Citation
Butcher, Brian Jerad, "Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes" (2013). Legacy Theses & Dissertations (2009 - 2024). 844.
https://scholarsarchive.library.albany.edu/legacy-etd/844