Date of Award
1-1-2012
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xxxi, 218 pages) : illustrations (some color)
Dissertation/Thesis Chair
Fatemeh (Shadi) Shahedipour-Sandvik
Committee Members
Hassaram Bakhru, Alain C. Diebold, Suchismita Guha, Joan M. Redwing
Keywords
III-Nitrides on Si, Ion Implantation, MOCVD, Molecular Dynamics, Spectroscopic Ellipsometry, TEM, Ion implantation, Nitrides, Aluminum nitride
Subject Categories
Atomic, Molecular and Optical Physics | Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors responsible for its successful implementation.
Recommended Citation
Tungare, Mihir Hemant, "Experimental and theoretical analysis of strain engineered aluminium nitride on silicon for high quality aluminium(x)indium(y)gallium(1-x-y)nitride epitaxy" (2012). Legacy Theses & Dissertations (2009 - 2024). 789.
https://scholarsarchive.library.albany.edu/legacy-etd/789
Included in
Atomic, Molecular and Optical Physics Commons, Materials Science and Engineering Commons, Nanoscience and Nanotechnology Commons