Date of Award
1-1-2012
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (xxvii, 148 pages) : illustrations (some color)
Dissertation/Thesis Chair
Alain E Kaloyeros
Committee Members
Mengbing Huang, Alain C Diebold, Hassaram Bakhru, Spyros Gallis
Keywords
Electroluminescence, Erbium, Erbium Oxide, Erbium Silicate, MOS Structures, Photoluminescence, Nanosilicon, Metal oxide semiconductors
Subject Categories
Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
Silicon-based photonics requires several components, such as a light source, an amplifier/waveguide to transfer the signal, and a photodetector to detect the signal. The motivation for using these silicon-based technologies in photonics applications is two-fold: economic advantages offered by the compatibility with mature silicon IC manufacturing and its excellent material properties for photonic devices (high thermal conductivity, high optical damage threshold, etc.). One of the major challenges in the realization of this technology is the Si-based light source. Because of its indirect bandgap, silicon has very inefficient band-to-band radiative electron-hole recombination. To overcome this obstacle, tremendous research efforts have been focused on finding methods to enhance light emission from silicon compatible materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, erbium oxides/silicates, and SiO2/Si MOS structures. This thesis research work will focus on the last three mentioned methods to enhance light emission.
Recommended Citation
Kamineni, Himani Suhag, "Materials engineering for near-infrared light emission from silicon compatible MOS structures" (2012). Legacy Theses & Dissertations (2009 - 2024). 657.
https://scholarsarchive.library.albany.edu/legacy-etd/657