Date of Award

1-1-2011

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xii, 1184 pages) : illustrations (some color)

Dissertation/Thesis Chair

Robert Brainard

Committee Members

Gregory Denbeaux, Richard Matyi, Alain Diebold, Gregg Gallatin

Keywords

Extreme Ultraviolet Lithography, Photoresists, Polymeric underlayers, quantum yield, Ultra thin film resists, Extreme ultraviolet lithography, Thin films

Subject Categories

Nanoscience and Nanotechnology

Abstract

Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This quantity is referred to as the film quantum yield (FQY). Utilizing increased photoacid generator (PAG) concentrations, the impact of FQY on the overall resist lithographic performance is characterized. However, despite significant improvements in RLS performance, LER continues to fall significantly short of industry requirements.

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