Date of Award

1-1-2011

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (vi, 132 pages) : illustrations (some color), color map.

Dissertation/Thesis Chair

Pradeep Haldar

Committee Members

Pradeep Haldar, Haralabos Efstathiadis, Kathleen Dunn, Ernest Levine, Ojo Adurodija

Keywords

CuInAlSe, selenization, sputtering, thin-film solar, Solar cells, Thin films, Sputtering (Physics)

Subject Categories

Materials Science and Engineering | Nanoscience and Nanotechnology

Abstract

CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, α-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes any combination of the cations Cu, Al, Ga, and In along with the anions S, Se, and Te). This thesis focuses on the second option, substituting aluminum for gallium in the chalcopyrite lattice to form a CuInAlSe2 (CIAS) film using a sputtering and selenization approach.

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