Date of Award

1-1-2010

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (xv, 236 pages) : illustrations.

Dissertation/Thesis Chair

Robert E Geer

Committee Members

Donald F. Canaperi, Christopher Borst, Hassaram Bakhru, Michael Carpenter, Mengbing Huang Huang

Keywords

CMP, Conditioner, Copper polish, Nanoabrasive, Retention, Slurry, Chemical mechanical planarization, Integrated circuits, Copper compounds, Polyurethanes, Nanoelectronics

Subject Categories

Materials Science and Engineering | Nanoscience and Nanotechnology

Abstract

The continued reduction in integrated circuit (IC) feature size requires similar reductions in surface defectivity. A key source of surface defects in IC fabrication processes stems from nanoabrasives used in chemical-mechanical planarization (CMP) processing. During CMP processing, polished surfaces are more vulnerable to defects including scratching, nanoabrasive particle adhesion and nanoabrasive agglomerate adhesion. The removal of these nano-sized particles is a priority for the IC fabrication industry and is reflected in the 2008 ITRS defect budget. However, there is insufficient technical understanding regarding the retention of residual nanoabrasives on the surfaces of the CMP pad following a CMP process and how they can be removed. Particularly, there are no systematic quantitative studies regarding nanoabrasive transport - specifically, nanoabrasive retention, agglomeration and removal mechanisms at pad surfaces (including micro-pores and asperities) that have been exposed (or not exposed) to polishing.

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