Date of Award

5-1-2021

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (x, 129 pages) : color illustrations, map.

Dissertation/Thesis Chair

Nathaniel Cady

Committee Members

Nicholas Fahrenkopf Fahrenkopf, Alain Diebold Diebold, Robert Geer Geer, Don Canaperi Canaperi

Keywords

Directonal Coupler, Interposer, Mechanical Stress, Photo-Elastic Effect, Ring Resonator, Silicon Photonics, Silicon, Integrated optics, Metal oxide semiconductors, Complementary, Optoelectronic devices, Photonics, Integrated circuits

Subject Categories

Nanoscience and Nanotechnology

Abstract

Overcoming the bandwidth bottleneck in conventional interconnects necessitates transitioning to alternative scaling paradigms. Silicon (Si) photonics is considered a disruptive technology, capable of meeting the growing demands for higher bandwidth, low latency, and power efficiency. By leveraging the intrinsic properties of optical signals and manufacturing compatibility of Si, the co-integration of Si photonics and complementary-metal-oxide-semiconductor (CMOS) circuitry leading to terabit data speeds for next generation data communication can be realized. Heterogeneously integrating Si photonic functionality with well-established CMOS technology in an Si photonic interposer architecture simultaneously provides independent optimization as well as close integration of both technologies in one platform. The Si photonic interposer architecture is comprised of a photonic wafer that is SiO2- SiO2 bonded to a through silicon via (TSV) interposer. Electrical interfacing between attached die, active photonic devices, and the TSV interposer are established with the use of compact 2 μm diameter through-oxide-vias (TOV). The TOV has ultra-low capacitance (1.45 pf) and minimal parasitic capacitance (~3pf) which is critical for next generation highly compact optical systems. Stress generation from TOV annealing can effect light propagation in optical devices due to the photo-elastic effect. This can manifest as weak mode confinement, wavelength shifts, multimode propagation, and several optical loss mechanisms.

Download

Share

COinS