Date of Award

1-1-2010

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xii, 104 pages) : illustrations (some color)

Dissertation/Thesis Chair

Dr. Hassaram Bakhru

Committee Members

Dr. Robert Geer, Dr. Yongqiang Xue, Dr. John Elter, Dr. Akira Inomata

Keywords

Berry Phase, Heterojunction, Quantum Dot, Single Electron Transistor, Quantum dots, Quantum computers, Nanoelectromechanical systems

Subject Categories

Condensed Matter Physics | Nanoscience and Nanotechnology

Abstract

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning of the electron g-factor. In particular, we find that anisotropy extends the tunability to larger quantum dots in the GaAs case.

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