Date of Award

1-1-2019

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xiii, 112 pages) : color illustrations.

Dissertation/Thesis Chair

Gregory Denbeaux

Committee Members

Robert L. Brainard, Nathaniel Cady, Nelson Felix, Michael A. Carpenter

Keywords

electron, electron trapping, EUV, Extreme ultraviolet, lithography, radiation chemistry, Extreme ultraviolet lithography, Photoresists, Radiation chemistry, Photolithography

Subject Categories

Nanoscience and Nanotechnology

Abstract

The microelectronic industry’s movement toward smaller feature sizes has necessitated a shift to extreme ultraviolet (EUV) lithography to enable cost-effective patterning of sub 20-nm features. However, this shift from 193-nm lithography (6.4 eV) to EUV (13.5 nm, 92 eV) poses significant obstacles, such that photolithography is now operating in an energy range above the electron binding energies of common atomic species in photoresists. This significant energy increase means the chemical reactions happening within operate in the realm of radiation chemistry instead of photochemistry since the observed reactions are due almost entirely to the action of photoelectrons as they dissipate their energy within the medium. Further understanding of EUV radiation chemistry can lead to the development of better performing materials needed for implementation of EUV lithography into high volume manufacturing.

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