Date of Award
1-1-2019
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xiv, 173 pages) : color illustrations.
Dissertation/Thesis Chair
Ji Ung Lee
Committee Members
Spyridon Galis, Bradley Thiel, Carl Ventrice Jr., Phung Nguyen
Keywords
1D 2D materials, carbon nanotubes CNT, photovoltaic effect, pn junction, reconfigurable devices, tungsten diselenide WSe2, Nanotubes, Nanostructured materials, Metal oxide semiconductor field-effect transistors, Diodes, Semiconductor, Semiconductors
Subject Categories
Electrical and Electronics | Nanoscience and Nanotechnology | Physics
Abstract
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Recommended Citation
Dhakras, Prathamesh A., "Exploring gated nanoelectronic devices fabricated from 1D and 2D materials" (2019). Legacy Theses & Dissertations (2009 - 2024). 2264.
https://scholarsarchive.library.albany.edu/legacy-etd/2264
Included in
Electrical and Electronics Commons, Nanoscience and Nanotechnology Commons, Physics Commons