Date of Award
1-1-2018
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (ii, xii, 141 pages) : illustrations (some color)
Dissertation/Thesis Chair
Carl A Ventrice
Committee Members
Hassaram Bakhru, Vincent P Labella, James Lloyd, James B Hannon
Keywords
Copper, CVD, Epitaxy, Graphene, LEED, Single Crystal, Chemical vapor deposition, Copper crystals, Nanostructured materials
Subject Categories
Nanoscience and Nanotechnology
Abstract
Graphene is of significant interest due to its unique properties, such as high carrier mobility, mechanical strength, and thermal conductivity. Potential applications include next generation transistors, interconnects, biological and chemical sensing devices, and super capacitors. The research presented here addresses unresolved questions regarding the nucleation and growth of graphene by chemical vapor deposition (CVD) on the high index surfaces of copper single crystals. While much CVD graphene growth has been performed on copper foils, the polycrystalline nature of the foils renders large-scale single domain growth of graphene difficult. For this reason, many groups seek to reduce the nucleation rate of graphene on copper foil to increase graphene grain size. Another approach to growing high quality graphene films is to use single crystal substrates. Under the proper conditions, using single crystals of copper has been shown to produce well-aligned epitaxial growth of graphene.
Recommended Citation
Mowll, Tyler Rutley, "Growth of epitaxial graphene on single crystal copper surfaces by chemical vapor deposition" (2018). Legacy Theses & Dissertations (2009 - 2024). 2128.
https://scholarsarchive.library.albany.edu/legacy-etd/2128