Date of Award

1-1-2017

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (ii, vi, 131 pages) : illustrations (some color)

Dissertation/Thesis Chair

Christopher Borst

Committee Members

Ji Ung Lee, Mengbing Huang, Ernest Levine, Tyler Michalak

Keywords

450mm, dose rate, FinFET, ion implantation, source drain extension, twin defects, Ion implantation, Field-effect transistors, Silicon-on-insulator technology, Nanoelectronics, Nanosilicon

Subject Categories

Electrical and Electronics | Materials Science and Engineering | Nanoscience and Nanotechnology

Abstract

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples.

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