Date of Award
1-1-2014
Language
English
Document Type
Master's Thesis
Degree Name
Master of Science (MS)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xiii, 114 pages) : color illustrations.
Dissertation/Thesis Chair
Gregory Denbeaux
Committee Members
Carl Ventrice, Laura Schultz, Richard Matyi, Fred Strnisa
Keywords
EUV, extreme ultraviolet, lithography, Out-of-Band, photolithography, photoresists, Extreme ultraviolet lithography, Photoresists, Integrated circuits
Subject Categories
Engineering | Nanoscience and Nanotechnology
Abstract
As extreme ultraviolet lithography (EUVL) prepares to be incorporated into high volume manufacturing, many challenges must be addressed. Among these challenges, a need for photoresist improvement exists. The work described here will look into some of the problems and challenges facing EUV resists, in particular out-of-band (OOB) wavelengths of light and their interaction with photoresists. Studies have been completed on the effect of out-of-band light on photoresists [1]-[3]. It is imperative that solutions to suppress the deep ultraviolet (DUV) OOB light be incorporated into next generation EUV production tools due to concerns of decreased performance of lithography, and an increase of outgassing contamination [2].
Recommended Citation
Kane, Genevieve, "Characterization of extreme ultraviolet lithography photoresists using advanced metrology and fitting techniques" (2014). Legacy Theses & Dissertations (2009 - 2024). 1159.
https://scholarsarchive.library.albany.edu/legacy-etd/1159