Author ORCID Identifier

Michael Yeung:https://orcid.org/0000-0002-5677-6970

Reza Mohammadi:https://orcid.org/0000-0003-4676-4885

Document Type

Data

Publication Date

2026

DOI

https://doi.org/10.1039/D6MH00408C

Abstract

Abstract for data:

Raw data for the journal publication, Silicon-stabilized three-dimensional covalent networks in high entropy diborides. ReadMe file provided.

Abstract for Journal publication: 

High entropy ceramics offer a pathway to stabilize unconventional chemistries beyond traditional alloying rules. We report the incorporation of silicon into an AlB2-type high entropy diboride, Cr0.2Nb0.2Si0.2Ta0.2Ti0.2B2, despite silicon violating classical Hume-Rothery rules for alloying. Arc melting produced a phase-pure, chemically homogeneous structure, as confirmed by powder X-ray diffraction (pXRD) and scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM–EDS). Silicon occupies the metal sublattice, forming directional Si–B covalent bonds that link boron layers into a three-dimensional network within the otherwise layered structure. Mechanical testing shows that bulk Vickers hardness remains unchanged, while nanoindentation reveals a moderate increase in hardness at low loads and a ∼10% enhancement in Young's modulus, indicating strengthened lattice bonding with the addition of silicon. These results demonstrate that high configurational entropy can stabilize main-group elements in transition metal diborides, enabling new bonding arrangements and elastic behavior, and expanding the design space of high entropy alloys.

Comments

Raw data used to generate data for publication, which can be found here: 

Abraham A. Rosenberg, Ashton Bressler, Noah Teague, Gregory M. John, Colton D. Seymour, Daniel T. Lintz, Yiren Zhang, Joseph T. Doane, Alan Chen, Reza Mohammadi, Michael T. Yeung; Silicon-stabilized three-dimensional covalent networks in high entropy diborides. Mater. Horiz. 2026; 13 (13): 6407–6413. https://doi.org/10.1039/d6mh00408c

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