Date of Award

1-1-2011

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (ix, 192 pages) : illustrations (some color)

Dissertation/Thesis Chair

Robert Geer

Committee Members

Alain Diebold, James Lloyd, Wei Wang, Larry Smith

Keywords

3D interconnect, Raman spectroscopy, stress, thermo-mechanical stress, through silicon via, tip enhanced Raman spectroscopy, Integrated circuits, Silicon

Subject Categories

Nanoscience and Nanotechnology

Abstract

The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and novel ways in which it can be characterized can lead to more effective strategies to mitigate or control stress development.

Download

Share

COinS