Date of Award
1-1-2018
Language
English
Document Type
Dissertation
Degree Name
Doctor of Arts (DA)
College/School/Department
Department of Physics
Content Description
1 online resource (ii, x, 69 pages) : illustrations (some color)
Dissertation/Thesis Chair
T. S. Kuan
Committee Members
J. A. Ernst, J. C. Kimball, W. A. Lanford, G.-C. Wang
Keywords
Al-based superlattice, Carrier localization, Eletrical conductance, Interface scattering, nm-thick film, Superlattices as materials, Thin films, Metallic films, Electron transport, Quantum scattering, Aluminum alloys
Subject Categories
Physics
Abstract
Thin films and superlattices are widely used in modern technologies. Certain metal superlattices with layer thickness between 1 to 10 nm have interesting magneto transport properties and unique applications in spintronics and data storage. We have studied electrical conductance of Al/Ru, Al/Co, and Al/Mo superlattices with layer thickness between 1 to 2 nm. By monitoring the resistance change during the growth of the superlattice, we are able to observe directly the effects of carrier localization and scattering when a highly disordered interface is being deposited.
Recommended Citation
Zhang, Yanli, "Carrier scattering and localization in nm-thick Al/Ru, Al/Co and Al/Mo superlattices" (2018). Legacy Theses & Dissertations (2009 - 2024). 2199.
https://scholarsarchive.library.albany.edu/legacy-etd/2199