Date of Award
1-1-2013
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xi, 157 pages) : illustrations (some color)
Dissertation/Thesis Chair
John Hartley
Committee Members
Gregory Denbeaux, Eric Lifshin, Timothy Groves, Lan Zhang
Keywords
Defect, EUV, Extreme Ultraviolet, Lithography, Mask, Reticle, Extreme ultraviolet lithography, Reticles
Subject Categories
Engineering | Nanoscience and Nanotechnology
Abstract
Understanding the nature and behavior of native defects on EUV reticles, particularly their printability, is of critical importance to the successful implementation of EUV lithography for high volume manufacturing, as will be demonstrated in the upcoming chapters. Previous defect characterization work has focused on the examination of programmed defects, native defects on blank reticles, and unaligned native defects on patterned reticles. Each of these approaches has drawbacks, which will be discussed in detail, and the aim of this research is to address these deficiencies by developing a method to pattern features of interest over native defects, enabling the direct observation of their effect on lithography.
Recommended Citation
Lyons, Adam, "Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis" (2013). Legacy Theses & Dissertations (2009 - 2024). 937.
https://scholarsarchive.library.albany.edu/legacy-etd/937