Date of Award

1-1-2012

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xvii, 167 pages) : illustrations (some color)

Dissertation/Thesis Chair

Serge R Oktyabrsky

Committee Members

Hassaram Bakhru, Alain Diebold, Ernest N Levine, Sergei V Koveshnikov

Keywords

Antimonide, high-k, III-V, Mobility, MOSFET, strain, Metal oxide semiconductor field-effect transistors, Metal oxide semiconductors, Complementary

Subject Categories

Electrical and Electronics | Materials Science and Engineering | Nanoscience and Nanotechnology

Abstract

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface.

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