Date of Award
1-1-2011
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (vii, 159 pages) : illustrations (some color)
Dissertation/Thesis Chair
Serge Oktyabrsky
Committee Members
Alain Diebold, Hassaram Bakhru, Ernest Levine, Prashant Majhi
Keywords
Compound Semiconductor, GaAs, InGaAs, MOSFET, Compound semiconductors, Logic design, Metal oxide semiconductor field-effect transistors
Subject Categories
Nanoscience and Nanotechnology
Abstract
Group III-V compound semiconductors such as InGaAs and InGaSb are actively being considered as channel materials for low power, high performance digital logic applications due to superior carrier transport properties such as mobility and saturation velocity. The high density of interface states at high-k dielectric and III-V interface that results in pinning of Fermi level is one of the major challenges that need to be addressed before III-V CMOS becomes a mainstream technology.
Recommended Citation
Kambhampati, Rama, "High-k gate stack on compound semiconductor channel materials for low power, high performance digital logic applications" (2011). Legacy Theses & Dissertations (2009 - 2024). 367.
https://scholarsarchive.library.albany.edu/legacy-etd/367