Date of Award
5-1-2024
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Dissertation/Thesis Chair
Woongje Sung
Keywords
4H-SiC, Diodes, Power Device, Power Electronics, Silicon Carbide, Transistors
Subject Categories
Nanoscience and Nanotechnology
Abstract
The work presented in this document focuses on the design, optimization, and fabrication of power devices on 4H-Silicon Carbide (SiC) substrates. Power devices convert or control electric power flow and are the main components of electronic power systems worldwide. Power electronic systems are used in both low-power and high power settings, including prevalent applications such as fast charging set-ups for personal electronic devices, electric vehicle motor drives, and renewable energy storage and grid connections. With a wide spread of applications and the further electrification of our society on the horizon, it is crucial to minimize the power loss of power electronic systems and contribute to a more energy-efficient world. To achieve more efficient power electronic systems, the heart of the electronic system, the power device, must be optimized. Silicon (Si) power devices dominate the market for low-power applications with efficient device design and fabrication. As the power need increases for 600 V and above rated applications, Si devices are still being employed, but due to the material properties of the substrate, their energy efficiency has reached its limit. Here, the use of the wide-bandgap material 4H-SiC power devices has become an excellent choice to replace their Si counterpart, as they offer the potential for reduced power loss and robust device operation. As the use of 4H-SiC power devices becomes more and more prevalent in power electronic systems ranging from 600 V to 20 kV applications, it is imperative to continue to improve their device performance and ease of fabrication and implementation.
Recommended Citation
Lynch, Justin M., "Optimization And Fabrication Of Semiconductor Power Devices On 4H-Sic" (2024). Legacy Theses & Dissertations (2009 - 2024). 3345.
https://scholarsarchive.library.albany.edu/legacy-etd/3345
