Date of Award
12-1-2023
Language
English
Document Type
Master's Thesis
Degree Name
Master of Science (MS)
College/School/Department
Department of Chemistry
Dissertation/Thesis Chair
John T. Welch
Committee Members
Paul J. Toscano
Subject Categories
Chemistry
Abstract
As Deep Ultraviolet (DUV) Photolithography has hit the limit in further shrinking semiconductor devices' critical dimension (CD) down to below 10 nm, using Extreme Ultraviolet (EUV) 13.5 nm wavelength is under intense development. EUV has higher resolution (R) as a consequence of the shorter wavelength, but EUV sources have much lower light intensity than DUV light sources, leading to sensitivity challenges. While light source intensity and photoresist sensitivity (S) have a complementary relationship, and high intensity EUV light source development only progresses slowly, this paper discusses other novel approaches to improve photoresist sensitivity with low intensity EUV light. Photosensitization chemistry plays a vital role in compensation for the low intensity of the EUV light source. The addition of Photosensitizers (PS) to the Photoacid generator (PAG) and quencher components of a standard Chemically Amplified Resist (CAR) enables selective amplification of photoacid generation and annihilation of quencher to improve sensitivity (S) and line Edge Roughness (L). It is challenging to improve resolution (R), sensitivity (S) and line edge roughness (LER) simultaneously due to existence of RLS tradeoff relationship. PSCAR (PSCAR 1.0) has aggressively made enhancements to PSCAR1.5 and PSCAR 2.0, and a comparative study has been discussed with respect to standard CAR.
Recommended Citation
Hossain, Israt, "Photosensitized Chemically Amplified Resist (Pscar) For Extreme Ultraviolet Lithography (Euvl)" (2023). Legacy Theses & Dissertations (2009 - 2024). 3152.
https://scholarsarchive.library.albany.edu/legacy-etd/3152