"Photosensitized Chemically Amplified Resist (Pscar) For Extreme Ultrav" by Israt Hossain

Date of Award

12-1-2023

Language

English

Document Type

Master's Thesis

Degree Name

Master of Science (MS)

College/School/Department

Department of Chemistry

Dissertation/Thesis Chair

John T. Welch

Committee Members

Paul J. Toscano

Subject Categories

Chemistry

Abstract

As Deep Ultraviolet (DUV) Photolithography has hit the limit in further shrinking semiconductor devices' critical dimension (CD) down to below 10 nm, using Extreme Ultraviolet (EUV) 13.5 nm wavelength is under intense development. EUV has higher resolution (R) as a consequence of the shorter wavelength, but EUV sources have much lower light intensity than DUV light sources, leading to sensitivity challenges. While light source intensity and photoresist sensitivity (S) have a complementary relationship, and high intensity EUV light source development only progresses slowly, this paper discusses other novel approaches to improve photoresist sensitivity with low intensity EUV light. Photosensitization chemistry plays a vital role in compensation for the low intensity of the EUV light source. The addition of Photosensitizers (PS) to the Photoacid generator (PAG) and quencher components of a standard Chemically Amplified Resist (CAR) enables selective amplification of photoacid generation and annihilation of quencher to improve sensitivity (S) and line Edge Roughness (L). It is challenging to improve resolution (R), sensitivity (S) and line edge roughness (LER) simultaneously due to existence of RLS tradeoff relationship. PSCAR (PSCAR 1.0) has aggressively made enhancements to PSCAR1.5 and PSCAR 2.0, and a comparative study has been discussed with respect to standard CAR.

Included in

Chemistry Commons

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