Date of Award
1-1-2019
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xiii, 232 pages) : illustrations (some color)
Dissertation/Thesis Chair
Robert L Brainard
Committee Members
Michael Hagerman, Gregory Denbeaux, Daniel A Freedman, Scott Tenenbaum
Keywords
Antimony, Carboxylate, EUV, Outgassing, Photoresist, ToF-SIMS, Extreme ultraviolet lithography, Photoresists, Antimony compounds, Organometallic compounds
Subject Categories
Nanoscience and Nanotechnology
Abstract
In 2019, Extreme Ultraviolet (EUV) lithography begins its integration into high volume manufacturing to replace 193-nm lithography at key steps in the fabrication of integrated circuits. To achieve the requirements of the 7- and 5-nm nodes, a new photoresist technology is required to replace traditional chemically-amplified photoresists (CAR). One novel technology incorporates metal atoms with high EUV absorptivity into the photoresist. In this work, we describe the development, evaluation and mechanistic investigation of triorganoantimony(V) dicarboxylate complexes as novel photoresists for EUV lithography.
Recommended Citation
Murphy, Michael, "Mechanistic investigation of antimony carboxylate photoresists for EUV lithography" (2019). Legacy Theses & Dissertations (2009 - 2024). 2346.
https://scholarsarchive.library.albany.edu/legacy-etd/2346