Date of Award
5-1-2019
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xxi, 243 pages) : color illustrations.
Dissertation/Thesis Chair
Fatemeh Shahedipour-Sandvik
Committee Members
Natalya Tokranova, J Andres Melendez, Kenneth Jones, Radislav A Potyrailo
Keywords
Body-diode, Device Engineering, GaN, HEMTs, Power-Electronics, Sensing, Modulation-doped field-effect transistors, Nanostructured materials, Power electronics, Gallium nitride
Subject Categories
Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
The research work presented in this Ph.D. thesis focuses on the engineering of AlGaN/GaN high electron mobility transistors (HEMTs) for the development of future device technology in power electronic and sensing applications.
Recommended Citation
Mahaboob, Isra, "Device engineering of AlGaN/GaN HEMTs for applications in power-electronic and sensing" (2019). Legacy Theses & Dissertations (2009 - 2024). 2327.
https://scholarsarchive.library.albany.edu/legacy-etd/2327