Date of Award
1-1-2019
Language
English
Document Type
Master's Thesis
Degree Name
Master of Science (MS)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (viii, 66 pages) : illustrations (some color)
Dissertation/Thesis Chair
Gregory Denbeaux
Committee Members
Ernest N Levine, Unnikrishnan Sadasivan Pillai, Brad Thiel, Martin Rodgers
Keywords
defect reduction, EUV, extreme ultraviolet lithography, ion beam deposition, mask blank, multi layer mask, Extreme ultraviolet lithography, Masks (Electronics), Photoresists, Physical vapor deposition
Subject Categories
Nanoscience and Nanotechnology
Abstract
Extreme ultraviolet lithography (EUVL) is the next-generation lithography technology and is slated to replace 193-nanometer argon fluoride (ArF) lithography. EUVL uses 13.5-nanometer wavelength light to expose the photoresist. In doing so it enables the technological achievement of 20-nanometer half-pitch circuits which cannot be achieved with conventional 193-nanometer optical lithography.
Recommended Citation
Antohe, Alin O., "Partitioning of defect sources and defects reduction in EUV mask blank multilayer deposition" (2019). Legacy Theses & Dissertations (2009 - 2024). 2214.
https://scholarsarchive.library.albany.edu/legacy-etd/2214