Date of Award

1-1-2016

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (xv, 143 pages) : color illustrations

Dissertation/Thesis Chair

Serge Oktyabrsky

Committee Members

Serge Oktyabrsky, Ernest Levine, Alain Diebold, Hassaram Bakhru, Steven Bentley

Keywords

Group III-Sb CMOS, Hole mobility of GaSb, III-Sb on Si, InAs cap layer, Migration-Enhanced Epitaxy (MEE), Strained InGaSb Quantum Wells, Metal oxide semiconductor field-effect transistors, Metal oxide semiconductors, Complementary

Subject Categories

Electrical and Electronics | Materials Science and Engineering | Physics

Abstract

The continuous scaling of silicon CMOS predicts the end of roadmap due to the difficulties such as that arise from electrostatic integrity, design complexities, and power dissipation. These fundamental and practical limitations bring the need for innovative design architectures or alternate materials with higher carrier transport than current Si based materials. New device designs such as multigate/gate-all-around architectures improve electrostatics while alternate materials like III-Vs such as III-As for electrons and III-Sbs for holes increase operational speed, lower power dissipation and thereby improve performance of the transistors due to their low effective mass and faster transport properties. Further, application of compressive strain on InxGa1-xSb modifies band structure enhancing hole mobility on par with its rival Germanium. This band structure modification lowers in plane hole meff* improving carrier transport thereby lowering power dissipation and increasing operational speed of future CMOS technology.

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