Date of Award
1-1-2015
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (xxiii, 215 pages) : color illustrations
Dissertation/Thesis Chair
Richard J Matyi
Committee Members
Kathleen Dunn, Bradley Thiel, John G Hartley, Abner F Bello
Keywords
CD-SAXS, critical dimension, FinFET, metrology, SAXS, Small angle X-ray scattering, Small-angle x-ray scattering, Semiconductors, Metal oxide semiconductor field-effect transistors
Subject Categories
Nanoscience and Nanotechnology | Optics
Abstract
Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.
Recommended Citation
Settens, Charles Michael, "An assessment of critical dimension small angle X-ray scattering metrology for advanced semiconductor manufacturing" (2015). Legacy Theses & Dissertations (2009 - 2024). 1502.
https://scholarsarchive.library.albany.edu/legacy-etd/1502