Date of Award
1-1-2015
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Sciences
Content Description
1 online resource (xvi, 144 pages) : color illustrations
Dissertation/Thesis Chair
Christopher Borst
Committee Members
Rock-Hyun Baek, Douglas Coolbaugh, Ji Ung Lee, Ernie Levine
Keywords
Arsenic, CMOS, finFET, Ion Implantation, Laser annealing, Silicon, Metal oxide semiconductor field-effect transistors, Silicon-on-insulator technology, Rapid thermal processing, High power lasers, Semiconductor industry
Subject Categories
Electrical and Electronics | Engineering | Materials Science and Engineering
Abstract
The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.
Recommended Citation
Michalak, Tyler J., "Study of millisecond laser annealing on ion implanted soi and application to scaled finfet technology" (2015). Legacy Theses & Dissertations (2009 - 2024). 1465.
https://scholarsarchive.library.albany.edu/legacy-etd/1465