Date of Award

1-1-2015

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Sciences

Content Description

1 online resource (xxvii, 179 pages) : color illustrations.

Dissertation/Thesis Chair

Serge Oktyabrsky

Committee Members

Ernest Levine, Hassaram Bakhru, Alain Diebold, Richard Hill

Keywords

CMOS, III-V, InGaAs, InGaSb, Semiconductor, Transistor, Metal oxide semiconductor field-effect transistors, Metal oxide semiconductors, Complementary, Compound semiconductors, Gallium arsenide semiconductors

Subject Categories

Nanoscience and Nanotechnology

Abstract

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates.

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