Experimental and simulation studies of printability of buried EUV mask defects and study of EUV reflectivity loss mechanisms due to standard EUV mask cleaning processes

Author

Mihirkant Upadhyaya, University at Albany, State University of New YorkFollow

Date of Award

1-1-2014

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (ix, 135 pages) : color illustrations.

Dissertation/Thesis Chair

Gregory Denbeaux

Committee Members

John Hartley, Carl Ventrice, Mengbing Huang, Arun J Kadaksham

Keywords

Buried Multilayer Phase Defects, Defect Printability, EUV Lithography, FDTD, waveguide simulations, Level-set Growth Model, Mask Cleaning, Masks (Electronics), Extreme ultraviolet lithography, Reflection (Optics)

Subject Categories

Materials Science and Engineering | Nanoscience and Nanotechnology | Optics

Abstract

There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks.

Recommended Citation

Upadhyaya, Mihirkant, "Experimental and simulation studies of printability of buried EUV mask defects and study of EUV reflectivity loss mechanisms due to standard EUV mask cleaning processes" (2014). Legacy Theses & Dissertations (2009 - 2024). 1295.
https://scholarsarchive.library.albany.edu/legacy-etd/1295