Fundamental studies of supported graphene interfaces : defect density of states in graphene field effect transistors (FETs) and ideal graphene - silicon Schottky diodes

Author

Dhiraj Sinha, University at Albany, State University of New YorkFollow

Date of Award

1-1-2014

Language

English

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

College/School/Department

Department of Nanoscale Science and Engineering

Program

Nanoscale Engineering

Content Description

1 online resource (xv, 118 pages) : color illustrations.

Dissertation/Thesis Chair

Ji Ung Lee

Committee Members

Alain Diebold, Carl Ventrice, Brian Ji, Vincent LaBella

Keywords

Disorder density of states, Field effect transistors, Graphene, Ideal Schottky diode, Interfaces, Landauer transport formalism, Diodes, Schottky-barrier, Nanostructured materials, Electron transport, Semiconductors

Subject Categories

Materials Science and Engineering | Nanoscience and Nanotechnology | Physics

Abstract

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.

Recommended Citation

Sinha, Dhiraj, "Fundamental studies of supported graphene interfaces : defect density of states in graphene field effect transistors (FETs) and ideal graphene - silicon Schottky diodes" (2014). Legacy Theses & Dissertations (2009 - 2024). 1273.
https://scholarsarchive.library.albany.edu/legacy-etd/1273