Date of Award
1-1-2013
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Nanoscale Science and Engineering
Program
Nanoscale Engineering
Content Description
1 online resource (xiii, 111 pages) : color illustrations.
Dissertation/Thesis Chair
Hassaram Bakhru
Committee Members
Fatemeh Shahedipour-Sandvik, Toh-Ming Lu, Alain Diebold
Keywords
Boron, Defects, Doping, LASER annealing, Ultra shallow junctions, Metal oxide semiconductors, Complementary, Semiconductor doping, Semiconductors, Nanostructured materials
Subject Categories
Materials Science and Engineering | Nanoscience and Nanotechnology
Abstract
One of the biggest challenges in the scaling of CMOS devices is the formation of a highly activated, abrupt, defect free Source drain extension (SDE) region. This is especially difficult with p-FET's because of the (1) Boron diffusion co-efficient enhancement from Transient enhanced diffusion (TED) and (2) low solid solubility of
Recommended Citation
Vanamurthy, Lakshmanan H., "Understanding defect interactions in Si Ultra-shallow p-n junctions formed by very low energy boron implantation" (2013). Legacy Theses & Dissertations (2009 - 2024). 1031.
https://scholarsarchive.library.albany.edu/legacy-etd/1031