Date of Award
1-1-2011
Language
English
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
College/School/Department
Department of Physics
Content Description
1 online resource (xii, 73 pages) : illustrations (some color)
Dissertation/Thesis Chair
T. S. Kuan
Committee Members
Lucas Henderson, William Lanford, Carolyn MacDonald, John Kimball, T. S. Kuan
Keywords
Diffusion barrier, PVD, Surface segregation, Trench fill, Viscous flow, Interconnects (Integrated circuit technology), Integrated circuits, Copper, Copper alloys
Subject Categories
Physics
Abstract
The scaling of integrated circuits has led to new challenges in Cu interconnect fabrication. It is getting difficult to fill narrow trenches, e.g. 20 nm wide, by Cu electroplating. In this work, a high temperature PVD Cu viscous flow trench fill process was explored to overcome the difficulties of filling narrow and high aspect ratio trenches.
Recommended Citation
Wu, Zhiyuan, "PVD Cu trench-fill by viscous flow at high temperatures" (2011). Legacy Theses & Dissertations (2009 - 2024). 483.
https://scholarsarchive.library.albany.edu/legacy-etd/483